December 30, 2024Open Access

Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures

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Abstract

device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.

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Authors

Dipanjan Sen

Harikrishnan Ravichandran

M.B. Das

Journals

Nature Communications

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Institutions

University of Minnesota

Pennsylvania State University

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Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures

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Abstract

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