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This article comprehensively reviews the technological advancements, emerging materials, processing techniques adopted (atomic layer deposition, atomic layer etching, and neutral beam etching), geometric influences, and fabrication challenges in the development of advanced semiconductor devices. These technologies are recognized for their precision at the atomic scale and are crucial in fabricating next-generation silicon photonics optoelectronic devices. They also play an important role in the development of RF/power third-generation compound semiconductors and advanced semiconductor devices. Atomic layer deposition (ALD) offers superior control over thin film growth, ensuring uniformity and material conformity. Atomic layer etching (ALE) enables precise layer-by-layer material removal, making it ideal for high-aspect-ratio structures. Neutral beam etching (NBE) minimizes surface damage, a key factor in maintaining device reliability, particularly for GaN-based semiconductors. This article also assesses the role of these technologies in enhancing semiconductor device performance, with a focus on overcoming the limitations of traditional methods. The combined application of ALD, ALE, and NBE technologies is driving innovations in advanced semiconductor fabrication, making these processes indispensable for advancements in areas such as micro-LEDs, optical communication, and high-frequency, high-power electronic devices.
Lee et al. (Wed,) studied this question.