In this study, a comparative evaluation of ambipolarity suppression is performed in the conventional in‐built N+ pocket dual‐material gate electrical‐doped tunnel field‐effect transistor (DMG‐ED‐TFET, D1). To enhance ambipolarity suppression, two new devices are proposed: the DMG metal silicide ED‐TFET (D2) and the DMG dopant‐segregated Schottky‐barrier (DSSB) Drain ED‐TFET (D3), achieved by replacing the drain with metal silicide and implementing a DSSB. The configuration of the proposed devices incorporates a control gate (CG) alongside a polarity gate (PG). The PG is set to a bias of −0.7 V to establish a P+ region at the source side, thus negating the necessity for extra chemical doping. Additionally, the CG is subdivided into two distinct material gates: the tunnel gate (TG) and the auxiliary gate (AG). By adjusting the work functions of the AG and TG, the effective tunneling barrier of the devices can be fine‐tuned. When compared to D1, the proposed D2 achieves a suppression of ambipolarity by a factor of 7850, while D3 demonstrates a remarkable suppression by a factor of 2.57 × 10 10 . Thus, incorporating the DSSB in conventional DMG‐ED‐TFET results in a significant reduction in ambipolarity, making it more reliable than conventional devices for ultralow power applications.
Zhang et al. (Thu,) studied this question.