ABSTRACT This study investigates the working of a source pocket GaSb/Si heterojunction dual metal double gate vertical tunnel field effect transistor (V‐TFET) structure. Here, in the source region, a low bandgap material (GaSb) is used, and two pockets of the same material are fabricated in the channel region at the source/channel and channel/oxide interfaces. These pockets increase the carrier tunneling from the source to the channel region, which boosts the current drive of the device. This device, with the minimal subthreshold swing (SS) value of 15.3 mV/decade, shows better switching performance as compared to its w/o pocket counterpart. Other figures of merit (FOMs) like I ON /I OFF ratio and the analog/RF performance of this structure were found to be further superior to both w/o pocket DM‐DG‐VTFET as well as the other VTFET structures reported in the literature. Circuit implementation of this structure was done first into the sub‐circuit of the CMOS inverter. Here, both dc and transient analysis were performed to verify the electrical performance of this sub‐circuit. Finally, instances of the sub‐circuit were used to implement the ring oscillator inverter circuits. All the device verifications were done in the commercial TCAD tool, Silvaco, and circuit implementations were done using the CADENCE tool.
Das et al. (Tue,) studied this question.