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This is a In Vitro Study study.

August 21, 2025Optics Express0 citationsOpen Access

High-performance digital alloy n-B-n AlInAsSb extended short-wave infrared detector

WZWenguang Zhou YLYan Liang HHHongyue Hao

Key Points

The photodetector achieved a specific detectivity of 2.47 × 10 10 cm·Hz 1/2 ·W −1 at 300 K, indicating strong sensitivity.
It exhibited a 50% cutoff wavelength of ∼2.86 μm at room temperature, suggesting effective infrared detection.
Developed using molecular beam epitaxy, the device shows potential for compact infrared sensing systems.
At 160 K, the specific detectivity improved to 1.22 × 10 12 cm·Hz 1/2 ·W −1 with peak responsivity at 2.68 μm.

Abstract

This work presents an AlInAsSb-based digital alloy n-B-n extended short-wave infrared (eSWIR) detector grown by molecular beam epitaxy (MBE) on a GaSb substrate. The device achieves a 50% cutoff wavelength of ∼2.86 μ m and a 100% cutoff wavelength of ∼3.5 μ m at room temperature. The photodetector exhibited a specific detectivity ( D ∗ ) of 2.47 × 10 10 cm·Hz 1/2 ·W −1 at 300 K (with peak responsivity at 2.61 μ m) at a bias voltage of -0.1 V, which improved to 1.22 × 10 12 cm·Hz 1/2 ·W −1 at 160 K (with peak responsivity at 2.68 μ m). These results highlight the potential of AlInAsSb-based photodetectors for high sensitivity, low bias voltage operation, and compact infrared sensing systems.

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