The structure and composition of a refractory Ni-containing CrMoNbTaVW high entropy alloy (HEA) thin film were investigated. The HEA thin film with a thickness of 5 μm was grown by magnetron sputtering from a multiple-elemental compound target. The Ni-containing HEA thin film with a Ni concentration of 3.6 at. % exhibits a single-phase body-centered cubic (BCC) crystal structure with a lattice parameter of a = 0.316 nm. The grains in the HEA thin film are columns, extended in the growth direction. They are not exact perpendicular to the substrate surface. The thin film grows in a polycrystalline structure with a tendency to preferred orientation or texture. Energy-dispersive X-ray analyses of the HEA thin film show near equal atomic concentrations of Cr, Mo, Nb, Ta, V, W elements in the range 15-17 at. % with almost uniform distribution. In contrast, Ni is not uniformly distributed in the film, and grains with a different Ni-concentration were observed. The defects, observed in the HEA layer are mainly single dislocations or an assembly of dislocations, which could be caused by residual stresses in the layer during the growth of the HEA thin film.
Litvinov et al. (Mon,) studied this question.