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August 20, 2025Open Access

Emerging Memory Technologies in Computing: Innovations and Challenges in Memory Technology for Computing

Key Points

Emerging memory technologies bridge the gap between volatile DRAM and non-volatile flash storage, enhancing performance and efficiency.
Technologies like Resistive RAM and Phase Change Memory improve metrics such as scalability and endurance in computing systems.
This review encompasses a thorough analysis of technologies' mechanisms and applications within computing architectures.
These innovations point to promising developments in neuromorphic and in-memory computing paradigms for future applications.

Abstract

Memory technologies have seen significant advancements in recent years, driven by the increasing demands for higher performance, den- sity, and energy efficiency in computing applications. This review article presents an overview of emerging memory technologies, including Resis- tive RAM (ReRAM), Phase Change Memory (PCM), Magnetoresistive RAM (MRAM), and Ferroelectric RAM (FeRAM), analyzing their un- derlying mechanisms, potential applications, and integration challenges within current and future computing architectures. These technologies promise to bridge the gap between volatile DRAM and non-volatile flash storage, offering novel solutions that address scalability, endurance, and speed issues. We also explore the opportunities they present in the con- text of neuromorphic computing and in-memory computing paradigms. The discussion is contextualized within the framework of current research trends and industrial developments, illuminating the path forward towards next-generation memory solutions. An accompanying figure illustrates the relative positions of these technologies in terms of crucial metrics such as speed, endurance, and cost.

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