We demonstrate Si-based InGaAs/InP Multiple Quantum Well (MQW) photodetectors integrated with a dielectric metasurface (DM) structure, achieving 11.8 times photocurrent enhancement and 4.65 times responsivity improvement compared to conventional devices. FDTD simulations reveal optimized light–matter interactions within the DM structure, correlating with experimental observation. The devices exhibit a low dark current of 9 × 10 −3 μA and superior linearity in the photoelectric response curve, validating their potential for high-performance near-infrared detection.
Li et al. (Fri,) studied this question.