Methods for Enhancing the Formation of Hydroxyl Radicals When Polishing Single Crystal SiC

To enhance the formation of hydroxyl radicals (•OH) when polishing single crystal silicon carbide (SiC), this study proposes a catalytic-assisted polishing approach based on a Fe3O4/ZnO/graphite hybrid system. Firstly, methyl orange degradation experiments were conducted using Fe3O4/ZnO/graphite hybrid catalysts. Secondly, a resin-based abrasive tool embedded with the Fe3O4/ZnO/graphite hybrid was developed. Subsequently, polishing experiments under dry, water, and hydrogen peroxide conditions were performed based on the abrasive tool. The corresponding surface roughness (Sa) were 26.51 nm, 12.955 nm and 4.593 nm, separately. The material removal rate were 0.733 mg/h (1.586 μm/h), 2.800 mg/h (6.057 μm/h) and 4.733 mg/h (10.239 μm/h), respectively. The results demonstrate that the Fe3O4/ZnO/graphite hybrid synergistically enhanced •OH generation through Fenton reactions and tribocatalysis of ZnO. Therefore, the increased •OH productivity contributes to SiC oxidation and SiO2 removal, improving both polishing efficiency and surface finish. The catalytic-assisted polishing provides a novel approach for the high-efficiency ultra-precision machining for SiC.