Optimization of Electrical and Structural Parameters in Silicon Solar Cells Using a PC1D Simulation

Abstract Silicon solar cells remain the most popular type of photovoltaic technology because they are cost-effective and have well-established manufacturing processes. However, improving their efficiency further requires fine-tuning both electrical and structural aspects. In this study, we used PC1D simulation software (version 6.2) to carefully examine how factors like base resistivity, doping levels in the emitter and back surface field (BSF), and the lifetime of carriers in the bulk material affect the performance of monocrystalline n–p–p + silicon solar cells. The simulations were carried out under standard testing conditions (AM1.5G spectrum, 0.1 W/cm² illumination, and 25°C). The findings reveal that key parameters such as short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF), and overall efficiency (η) are highly influenced by doping levels and resistivity. The best results were obtained with a base resistivity of 5 ohm-centimetres, an emitter doping concentration between 1×1018 cm⁻³ to 1×1019 cm⁻³, and a BSF doping level up to 1×1018 cm⁻³, leading to a simulated efficiency of 20.43%, with Voc at 0.7046 V, Jsc at 38.87 mA/cm², and FF at 78.84%. When compared to real-world fabricated monocrystalline silicon solar cells, the simulation results showed strong agreement, confirming the reliability of the modelling approach. This research offers valuable insights into how to optimise parameters for better silicon solar cell performance, providing useful guidance for developing future industrial and laboratory-scale devices.