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This is a Experimental Study study.

September 18, 2025Open Access

Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO2 by Interface Engineering

CHCong HanHarbin University of Science and Technology HQHaiming QinFirst Affiliated Hospital of Zhengzhou University WSWeijing ShaoSuzhou Research Institute

Key Points

The device demonstrates the ability to achieve digital-to-analog switching behavior effectively.
Using a programmable pulse signal, the device shows properties of long-term potentiation and long-term depression.
The durable resistance state retention can enable the creation of high-density storage solutions.
The research explores the conduction mechanisms through physical model fitting and schematic representation.

Abstract

Metal oxides are the most widely used material for the resistive switching layer of memristors. Nevertheless, the majority of oxide-based memristors exhibit binary switching, restricting the emulation of neuronal synaptic behaviors. In this paper, the shift from digital-to-analog switching behavior is achieved by inserting an Al2O3 layer atop Zr-doped HfO2. The TiN/Al2O3/HZO/W/Si device exhibits long resistance state retention time and consistency. In addition, by applying a varying voltage, the device exhibits up to 20 continuous resistance states, which is highly significant for high-density storage. Upon the application of a programmable pulse signal, the device’s conductance undergoes continual alteration, reflecting long-term potentiation (LTP) and long-term depression (LTD) synaptic characteristics. The conduction mechanism of the device is studied through physical model fitting and schematic diagrams.

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