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September 24, 2025Open Access

Fully Transparent Lateral AlN Schottky Barrier Diodes with ITO Contacts

HWHsiao-Hsuan WanUniversity of Florida CCChao-Ching ChiangUniversity of Science and Technology FRF. RenLinköping University

Key Points

AlN Schottky barrier diodes exhibit turn-on voltages of 4.9-5.3 V and breakdown voltages up to 4 kV, indicating robust performance.
The power figure of merit for ITO contacted devices is 5.6 kW∙cm⁻², which is significantly lower than that of Ti/Au contacted rectifiers, suggesting areas for improvement.
On/off current ratios range from 10-100 across a reverse bias of up to 100V, demonstrating acceptable operational range for applications.
Higher on-resistances of ITO-based devices (5×10³-3×10⁵ Ω∙cm²) compared to traditional contacts indicate a need for enhanced material quality.

Abstract

Abstract Fully transparent lateral Aluminum Nitride (AlN) rectifiers with Indium Tin Oxide ( ITO) Ohmic and Schottky contacts offer a promising combination of optical transparency, high performance and durability, making them suitable for applications in optoelectronics and power electronics. In this work, we demonstrate fully transparent lateral AlN rectifiers with ITO contacts exhibiting turn-on voltages in the range 4.9-5.3 V and breakdown voltages up to 4 kV. On/off current ratios are between 10-100 over a reverse bias range up to 100V. However, compared to AlN rectifiers with traditional Ti/Au contacts, the ITO-based devices exhibited higher on-resistances (5×10³-3×10⁵ Ω∙cm²) and turn-on voltages (4.9-5.3 V), attributed to the ITO contact properties and defects within the AlN epitaxial layers. The maximum power figure of merit (VB²/Ron) was 5.6 kW∙cm⁻², significantly lower than that of Ti/Au contacted rectifiers, indicating room for improvement through enhanced material quality and contact optimization.

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