Multiphysical modeling of microelectronic systems with heterogeneous integration

The article presents modern methods of multiphysics modeling and simulation of heterogeneous integration processes in microelectronics. The research includes a comprehensive analysis of the thermal, mechanical, and electromagnetic characteristics of complex multi-component systems, combining various physical phenomena to improve the reliability and performance of microelectronic devices. Advanced software tools, including Ansys Multiphysics and EDA tools, are used for analysis, allowing for effective optimization of designs at the chip and package level. The results show that the use of redistribution layers, materials with low thermal expansion coefficients, and high-density interconnects significantly improves thermal management, reduces mechanical stresses, and lowers electromagnetic losses, which significantly enhances the overall efficiency and durability of systems. Local areas of overheating and stress concentration have been identified, and methods for minimizing them have been proposed, such as the use of air gaps and the optimization of interconnect geometry. The models have been verified using experimental data, which confirms the high accuracy of the simulations. The results obtained have important practical significance for the development of energy-efficient and reliable microelectronic solutions that are in demand in applications of artificial intelligence, high-performance computing, the Internet of Things, and other modern technologies that require high integration and compactness of devices. The work lays the foundation for further innovations in the field of microelectronics, helping to address the challenges posed by the slowdown in Moore's Law and the need for 3D integration.