Zinc oxide (ZnO) nanomaterials, particularly nanowire networks (nanonets), hold strong potential for next-generation nanoelectronic applications due to their unique optical, electronic, and mechanical properties. In this work, we demonstrate a scalable and reliable integration method for ZnO nanonets into thin-film transistors, overcoming key technological challenges through a detailed study of fabrication parameters. The resulting devices, with channel lengths ranging from the micrometer scale to the millimeter scale, exhibit uniform high-density networks and stable electrical characteristics. Key transistor parameters—including on/off current ratio, threshold voltage, and subthreshold swing—were evaluated. IOn/IOff ratios as high as 106 for a drain voltage of 0.5 V were demonstrated for the best devices, which is far better than similar work in the literature. Scaling behavior confirms that the dense nanonet operates in the bulk regime, consistent with Pouillet’s law. Importantly, the low thermal budget (400 °C) of the integration process ensures compatibility with flexible substrates, paving the way for future large-area, flexible electronics. These results highlight ZnO nanonets as a promising platform for high-performance, low-cost, and flexible nanoelectronic devices.
Morisot et al. (Fri,) studied this question.