Abstract Hafnium oxide (HfO X ) is one of the best metal oxides for resistive random-access memory (RRAM) devices, however different electrode configurations and the effect of magnetic field on these devices is yet to be studied. In this work, we report sputter deposited HfO X -based RRAM devices with different top electrodes and the combined effects of magnetic and electric fields on the switching beavior. The RRAM devices have been devices fabricated with a common bottom electrode (BE), indium tin oxide (ITO), and different top electrodes (TE) such as Ag, Pt, and Ni. All the prepared devices have demonstrated bipolar resistive switching mode.The active electrode Ag have shown good endurance and retention time of 10 2 cycles and 10 3 seconds, respectively and have a wider memory window of >10 3 . On the other hand, the devices with inert electrode, Pt have a lower operating voltage. Furthermore, the devices with Ni TE, have exhibited highest stability over cycle-to-cycle (up to 10 3 cycles), compared to other two TE configurations. Further, we have investigated the effect of magnetic field on the resistive switching in our devices with Ag and Ni TEs. Interestingly, due to the induced magnetoresistance effect, the HRS and LRS values increased simultaneously in the presence of magnetic field. For Ni-based devices, the magnetic field effect is more pronounced than other devices, and the resistance ratio enhances from ~1.7 to ~2.6 in the presence of magnetic field. Additionally, the set and reset voltages shifted toward higher values due to the Lorentz force. The resistance tuning confirms that the magnetic field can improve the RRAM device's switching process when suitable electrodes are used, and it also paves the way for emerging multilevel non-volatile memory technology.
Biswas et al. (Tue,) studied this question.
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