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October 23, 2025Journal of Physics D Applied PhysicsOpen Access

Effect of different top electrodes and magnetic field on HfO X based RRAM devices

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Authors

BBB. BiswasIndian Institute of Technology HyderabadAGAbhijit GhoshIndian Institute of Technology HyderabadSJSyed JalaluddeenIndian Institute of Technology Hyderabad

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Implication

Assessment reveals improved retention time and stability in RRAM devices with varying top electrodes, indicating the magnetic field enhances switching performance.

Key Points

  • Switching performance improved with a magnetic field, showcasing versatile electrode configurations.
  • Endurance and retention times reached up to 1000 cycles and 1000 seconds for devices with silver electrodes.
  • Sputter deposited HfO X -based RRAM devices demonstrated superior stability during resistive switching analysis.
  • Findings highlight the potential of magnetic fields to enhance non-volatile memory technology through resistance tuning.

Cite This Study

Biswas et al. (2025) studied this question.

synapsesocial.com/papers/68f9bad6d7353cfcfc68f392https://doi.org/10.1088/1361-6463/ae159c
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