Future of Power and High‐Speed/RF Electronics with Advanced High‐Performance GaN and Heterogeneous Integration with Silicon CMOS

Innovations in advanced GaN technology are shaping how power and data are delivered. The advent of 300 mm GaN‐on‐silicon is driving an inflection point in power and radio frequency (RF) electronics with more than 10X gains in performance figure‐of‐merits (FOMs) over silicon and III‐V technologies. The gains are made possible by advanced 300 mm process technologies that enable the scaling of GaN transistors to achieve higher transistor performance and density. As a result, the technology has led to fast‐switching and efficient power delivery solutions with ultrahigh densities, making it relevant for high‐performance compute and datacenter applications. Moreover, 3D monolithic integration of GaN and Si CMOS can be achieved on 300 mm GaN‐on‐silicon, enabling new possibilities, such as DrGaN for power electronics, and a fully integrated GaN mmwave RF beamformer for phased‐array applications. Progress has been made toward advancing 300 mm GaN‐on‐silicon for production with improvements in the tool ecosystem, the advent of engineered substrates, and better understanding of reliability.