Photo-electro-magneto-thermoelastic Excitation Rotating Semiconductor Medium based on Focused Laser Beam

This study aims to develop an advanced model for the propagation of photo electro-magneto-thermoelastic waves in rotating, nonlocal semiconductor media subjected to pulsed laser beam. The novelty of this work lies in formulating a new coupled dynamic model that integrates photothermal, mechanical stresses and carrier density with temperature interactions in an elastic semiconductor medium. The resulting coupled system for temperature, displacement, stress, and plasma density is solved using the normal-mode technique under pulsed laser beam. Numerical simulations are carried out for Silicon material to explore the influence of the electro-magnetic field and rotation. Results show that lowering the rotation produces slower thermal decay and enhanced oscillations in displacement components, reflecting long-memory heat transport at the Nano scale. Electro-magnetic field significantly modifies temperature profiles and stress amplitudes, with stronger effects near the heated surface. Rotation affect wave dispersion, while the electro-magnetic field interaction governs energy absorption and stress localization. The research presents, for the first time, electro-magnetic field photo thermoacoustic formulation for rotating semiconductors with temperature-dependent conductivity. The model enriches the theoretical understanding of ultrafast laser–matter interactions, offering guidance for the design of semiconductor devices and MEMS sensors, diagnostics operating under rapid or high-intensity thermal loads. The results are represented graphically to assess the influences of the rotation and electro-magnetic field on the plasma, thermal, and elastic waves.