AgInGaS (AIGS) quantum dots (QDs) are promising for displays due to their narrow full width at half maximum (FWHM) and tunable emission. However, nonuniform silver vacancy ( V Ag ) distribution causes emission broadening and hinders device performance improvement. Here, we present a multistep temperature control strategy that precisely regulates reaction temperature to control nucleation, cation exchange, and defect reconstruction, thereby enabling uniform V Ag distribution in AIGS QDs. Simultaneously, we construct a dual-layer shell structure (AgGaS 2 /GaS x ), which efficiently passivates surface defects. The synthesized red, green, and blue AIGS QDs achieve photoluminescence quantum yields (92.6, 98.5, and 53.3%) and narrow FWHMs (32, 29, and 21 nm). On the basis of these materials, we fabricated red, green, and blue QD light-emitting diodes that demonstrate external quantum efficiencies of 13.2, 8.0, and 2.9%. Moreover, the interfacial confinement self-assembly strategy enables the fabrication of full-color QD pixel arrays with resolutions up to 2032 pixels per inch, further highlighting the potential of AIGS QDs for near-eye displays.
Li et al. (Wed,) studied this question.