What question did this study set out to answer?

This research aims to study the anomalous Nernst effect in a ferromagnetic semiconductor (In,Fe)Sb at high temperatures.

March 21, 2026

High-temperature ferromagnetism and large anomalous Nernst effect above room temperature in (In,Fe)Sb ferromagnetic semiconductor

Key Points

This research aims to study the anomalous Nernst effect in a ferromagnetic semiconductor (In,Fe)Sb at high temperatures.
Optimized growth conditions for (In,Fe)Sb n-type thin films.
Measurement of thermopower at varying temperatures.
Analysis of ferromagnetic properties and Curie temperature.
Achieved a Curie temperature of approximately 460 K, the highest for n-type ferromagnetic semiconductors.
Observed an anomalous Nernst effect with thermopower of -3.2 μV/K at 332 K.
Measured thermopower of -1.3 μV/K at 447 K, comparable to topological materials.

Abstract

While the room-temperature anomalous Nernst effect (ANE) has been intensively studied in various ferromagnetic metals, it has never been studied in ferromagnetic semiconductors (FMSs) due to their low Curie temperature (TC). In this work, by optimizing the growth condition, we have grown an n-type (In,Fe)Sb FMS thin film with high TC ∼ 460 K at the Fe concentration of 30%, which is the highest TC reported so far in n-type FMSs. Using the high-TC (In,Fe)Sb thin film, we observe ANE with a large thermopower SxyANE = −3.2 μV/K at 332 K and −1.3 μV/K at 447 K. The large ANE in (In,Fe)Sb at room temperature is comparable to those observed in Mn3Sn and Co2MnGa topological materials.

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