This study investigated spin transport in antiferromagnetic conductors. A spin current was injected from a ferromagnetic Co film into an antiferromagnetic FeMn conductor. The DC voltage generated in the Pt layer was then measured under ferromagnetic resonance conditions at various angles of rotation of the dc magnetic field orientation in the film plane. The contribution due to the pure spin current (spin pumping), recorded using the inverse spin Hall effect in a normal metal, was calculated using models for calculating the contribution of spin current in bilayer ferromagnet/normal metal structures. The angular dependence of the resulting voltage caused by the spin current flow in the Co/FeMn/Pt structure was plotted. We found that the amplitude of the observed signal caused by the spin current flowing through a 15 nm antiferromagnetic interlayer of a conducting antiferromagnet (FeMn) is qualitatively and quantitatively comparable to a similar signal in a structure without an antiferromagnetic interlayer (Co/Pt).
Shaikhulov et al. (Wed,) studied this question.