Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors

The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap (Formula: see text), whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of Formula: see text and Formula: see text (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of E g is its strong sensitivity to external influences. Indeed, variations in E g resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.