What question did this study set out to answer?

This research focuses on the vibrational properties of InAs1−x−yPySbx epilayers, which are essential for enhancing device performance.

April 16, 2026

Vibrational studies of gas source molecular beam epitaxy grown InAs1−x−yPySbx epilayers by infrared reflectivity and Raman scattering

Key Points

This research focuses on the vibrational properties of InAs1−x−yPySbx epilayers, which are essential for enhancing device performance.
Utilized gas source molecular beam epitaxy to grow InAs1−x−yPySbx epilayers on n-InAs substrates.
Employed high-resolution Fourier transform infrared (FTIR) reflectivity for spectral analysis.
Conducted Raman scattering spectroscopy to observe phonon lines.
FTIR spectra revealed notable reflectivity peaks and dips linked to transverse and longitudinal optical phonon modes.
Raman scattering identified In–P, In–As, and In–Sb phonon lines corresponding to different compositions.
Disorder-related phonon features were observed within the miscibility gap when the As composition is below 0.4.

Abstract

Adding P and Sb into InAs produces InAsPSb quaternary alloys that are critical for improving the mid-infrared optoelectronics. InAs1−x−yPySbx/n-InAs multiple-quantum wells enhanced the stability and operations of devices at higher temperatures. The optimum performance of photonic devices is contingent on distinctive vibrational characteristics of InAs1−x−yPySbx layers, which influence the thermal management, optical absorption, and structural stability. Limited experimental and theoretical studies exist for their phonon traits. Gas source molecular beam epitaxy is used to prepare high-quality InAs1−x−yPySbx epilayers on nearly lattice matched n-InAs substrates. Systematic results of the lattice dynamical properties are reported by exploiting a high-resolution Fourier transform infrared (FTIR) reflectivity and Raman scattering spectroscopy. The FTIR spectra showed strong reflectivity peaks and dips, corresponding to the transverse optical ωTO and longitudinal optical ωLO phonon modes, respectively. Complementary to the FTIR results, the Raman scattering spectroscopy measurements are characterized with the diverse In–P, In–As, and In–Sb like ωLO and ωTO phonon lines. InAs1−x−yPySbx alloys suffer from the immiscibility issues when As composition is less than 0.4. Disorder related phonon features are noticed in samples having x and y within the miscibility gap. Meticulous simulations have authenticated the three-phonon-mode behavior of InAs1−x−yPySbx.

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