The traditional quantum tunneling theory, centered on probabilistic penetration, cannot provide intuitive and practical physical guidance for the research and parameter regulation of electron tunneling devices in industrial production. Abandoning the hardly applicable hypothesis of quantum probabilistic penetration, this paper proposes an electron substitution mechanism of tunneling. It clarifies that electron tunneling is not illogical probabilistic penetration, but a physical process in which an incident electron squeezes into the atomic barrier, triggers chain-type electron substitution among atoms, and finally ejects an electron from the other side of the barrier. Protons have their own exclusive Coulomb sphere of influence and impose strict binding on extranuclear electrons; foreign electrons cannot directly pass through the barrier. The essence of tunneling is that incident electrons break local charge balance, weaken proton binding, allow original electrons to escape by inertia, and form chain transmission. This paper focuses on the decisive influence of barrier thickness on electron tunneling, supplements the logic of system charge neutrality balance after electron loss, and applies the mechanism to industrial device production, parameter optimization and process control. It provides clear and executable physical theoretical guidance for the research and production of industrial products such as tunnel diodes, quantum tunneling devices, nano-electronic components and semiconductor chips, solving the industry pain point that traditional theories can only perform mathematical fitting but cannot guide practical processes.
Jiaqing Yan (Sun,) studied this question.