All-inorganic CsPbX3 (X = Cl, Br, I) perovskite materials exhibit outstanding optoelectronic properties, demonstrating great potential in the field of photodetectors. However, the limitations in achieving both high performance and long-term stability remain a key challenge hindering their practical application. In this work, a perovskite/BN heterojunction photodetector is fabricated via a spin-coating method. The device is based on a type-I band alignment structure, leveraging the synergistic effect of defect passivation and optical modulation enabled by BN nanosheets, which effectively suppresses nonradiative recombination while optimizing light absorption and utilization efficiency. The as-fabricated CsPbBr3/BN photodetector shows significant performance improvements: its responsivity and specific detectivity reach 10.56 mA/W and 1.96 × 109 Jones respectively, representing an approximately one-order-of-magnitude enhancement compared to the pure CsPbBr3 device (1.17 mA/W, 1.94 × 108 Jones). Furthermore, after exposure to ambient conditions for 20 days, the photocurrent retains over 80% of its initial value. The device also achieves a switch ratio of 5.87 × 103, outperforming both the pure CsPbBr3 device and other reported heterojunction devices of similar type. These results demonstrate the potential of BN nanosheets in enhancing the performance and stability of CsPbBr3 photodetectors, paving the way for the future development of perovskite/BN hybrid photodetectors and other optoelectronic devices.
Shuang et al. (Thu,) studied this question.