What question did this study set out to answer?

The aim is to develop a high-efficiency power amplifier for X-band applications using GaN HEMT technology.

May 24, 2026Open Access

High-Efficiency 10 W X-Band MMIC Power Amplifier in 0.2 μm GaN HEMT Technology

Key Points

The aim is to develop a high-efficiency power amplifier for X-band applications using GaN HEMT technology.
Created a three-stage power amplifier MMIC with a chip size of 4×2 mm2.
Evaluated performance in the 8–10.5 GHz frequency band.
Measured small-signal gain, maximum saturated power, and power-added efficiency.
Achieved a small-signal gain of 28.5 dB.
Maximum saturated power exceeded 40 dBm.
Demonstrated a maximum power-added efficiency of 51 %.

Abstract

This study presents a 10 W-class X-band three-stage power amplifier using a 0.2 μm GaN HEMT (high electron mobility transistor) process. The power amplifier monolithic microwave integrated circuit (MMIC), fabricated with a chip size of 4×2 mm2, demonstrates a small-signal gain of 28.5 dB, a maximum saturated power exceeding 40 dBm, and a maximum power-added efficiency (PAE) of 51 % in the 8～10.5 GHz band. The fabricated power amplifier MMIC is applicable to the transmitter section of high-power X-band radar systems, including airborne active electronically scanned array (AESA) radars.

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