Abstract: This work presents a SiGe pocket-based Triple Metal Double Gate Vertical Tunnel Field-EffectTransistor (TMDG-VTFET) to achieve enhanced switching performance and low-power operation by acomprehensive assessment of channel length, pocket length, and gate oxide parameters. The Triple Metal Double Gate architecture is employed to improve electrostatic control and tunneling efficiency at source-channel tunnelling junction. The results indicate that a channel length of 20 nm combined with a 5 nm SiGe pocket region provides a trade off between ON-state current and leakage suppression, yielding a high Ion/Ioffratio of ~1012 and a steep subthreshold swing of 20.39 mV/dec. Gate oxide engineering reveals that a 2 nm HfO2dielectric significantly enhances gate coupling, resulting in improved transconductance and reduced thresholdvoltage as compared to SiO2 and Al2O3. Work function engineering of the triple-metal gate further refines bandalignment, maximizing tunneling probability and switching efficiency. Temperature analysis shows stableoperation at room temperature; however, the leakage is increased at elevated temperatures. The optimized SiGepocket-based TMDG-VTFET demonstrates superior low-voltage operation, reduced power consumption, andstrong scalability, making it a promising candidate for next-generation ultra-low-power electronic applications.
Santosh Kumar Gupta Satyendra Kumar (Wed,) studied this question.