Atomic-level surface formation of large-size SiC substrates by chemical mechanical polishing: Interfacial chemistry and removal mechanism

Key Points

• The aim is to achieve atomic-level surfaces on large-size SiC substrates through effective material removal techniques.
• Investigation of chemical mechanical polishing techniques.
• Analysis of interfacial chemistry and removal mechanisms.
• Optimization of parameters for effective material removal.
• Successful atomic-level surface quality achieved in SiC substrates.
• Enhanced understanding of interfacial chemistry leading to improved removal mechanisms.
• Significant advancement in techniques for high-frequency electronic applications.