Feature size reduction of the front End of the Line (FEoL) and back End of the Line (BEoL) elements, i.e., transistors and interconnects, has been the main enabler of the next-generation computation systems. The decreasing trend of the cross-sectional area of the interconnect in advanced technology nodes, however, comes along with a drastic increase in the resistive parasitic, substantially impacting the overall energy efficiency and performance of the computer system. Mitigation of the high parasitic resistance within an advanced-node static RAM (SRAM)-based last-level cache (LLC) is the main target of this paper. To achieve this target, we augment the LLC interconnect with some degree of reconfiguration by utilizing a dynamic segmented bus (DSB). With DSB, the interconnect segments that are most actively used for a given workload can be shortened, on average, contributing to a smaller capacitive load. Hence, the efficient reconfiguration of an LLC interconnect strongly depends on the LLC demands of the application. To account for this workload dependency, we design the required microarchitectural support in an end-to-end application-to-technology flow. By optimizing the overhead of DSB switches and additional hardware modules, the SRAM-based LLC with DSB-augmented intra-macro interconnect achieves 33% energy savings and 16% reduction in total access time across eight representative workloads, with a negligible area overhead of less than 0.4%.
Mayahinia et al. (Fri,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: