Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry

Transition metal ion was added to CMP (chemical-mechanical polishing) slurry without abrasive particle to solve the problem of CMP. MRR (material removal rate) value of SiC substrate processed using non-abrasive slurry was comparable to MRR values of SiC substrates using abrasive slurries. The scratch formation was successfully suppressed in SiC substrate polished with using non-abrasive slurry and no residual particle resulting from agglomeration of abrasive particles could suppress scratches and forms a good quality of SiC substrate surface. Uniform and high-quality SiC substrates could be prepared through the non-abrasive CMP process.