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Abstract Precise control over polarity in field‐effect transistors (FETs) plays a pivotal role in the design and construction of complementary metal–oxide–semiconductor (CMOS) logic circuits. In particular, achieving such precise polarity control in 2D semiconductors is crucial for the further development of advanced electronic applications beyond unit devices. This paper presents a systematic investigation on the reversible transition of carrier types in a 2D MoTe 2 semiconductor under different annealing atmospheres. Photoemission spectroscopy and density functional theory (DFT) calculations demonstrate that annealing processes in vacuum and in ambient air induce a modification in the density of states, resulting in alterations in p ‐type or n ‐type characteristics. These reversible changes are attributed to the physisorption and elimination of oxygen on the surface of MoTe 2 . Furthermore, it is found that the device geometry affects the polarity of the transistor. By strategically manipulating both the annealing conditions and the geometric configuration, the n ‐ and p ‐type unipolar characteristics of MoTe 2 FETs are successfully modulated and ultimately demonstrating that the functionality of not only a complementary inverter with a high voltage gain of ≈20, but also more complex logic circuits of NAND and NOR gates.
Yu et al. (Wed,) studied this question.