Vacancy-Mediated Enhancement of Interfacial Thermal Transport in Si/SiC Heterojunctions: A Molecular Dynamics Study

Key Points

• This research aims to address the challenges posed by phonon mismatch at Si/SiC interfaces to enhance thermal transport.
• Utilized non-equilibrium molecular dynamics (NEMD) simulations
• Focused on the Si/SiC heterojunction interface
• Examined the effects of vacancies on thermal transport properties
• Demonstrated that vacancies enhance thermal transport across the interface.
• Revealed a reduction in phonon mismatch effectiveness due to vacancy presence.
• Indicated improved thermal management potential in nanoscale applications.