Abstract The recombination rates of D atoms in solid D ₂ 2 films were measured in the temperature range 0. 23– 1. 64\, K 1. 64 K. Atoms were formed in thin D ₂ 2 films by maintaining radio-frequency discharge above the film surface for several days. After stopping discharge the decay of D atoms concentrations was monitored at different temperatures by the method of electron spin resonance (ESR). Decreasing the films temperature from 1. 64 to 0. 23 K resulted in reducing the recombination rate from 7. 2 10^-26\, cm³s^-1 7. 2 × 10 - 26 cm 3 s - 1 to 1. 0 10^-27\, cm³s^-1 1. 0 × 10 - 27 cm 3 s - 1.
Wetzel et al. (Mon,) studied this question.