This paper presents an efficient and accurate method to simulate the behavior of electron transport in silicon-based semiconductors using the ensemble Monte Carlo (EMC) technique. In this approach, various scattering mechanisms, including impurity scattering, acoustic phonon scattering, and nonpolar optical phonon scattering, are taken into account to realistically model the carrier dynamics in silicon. A comprehensive three-valley model is implemented to accurately capture the anisotropy of the semiconductor and the non-parabolicity of the conduction band. The effects of different electric field strengths and temperature variations on the drift velocity of electrons are systematically analyzed under both steady-state and transient (non–steady-state) conditions. The simulation results obtained from the proposed EMC model are thoroughly compared with those derived from Silvaco TCAD software to validate the model’s accuracy and reliability. Owing to its precision and computational efficiency, the proposed model can serve as a robust foundation for the simulation and design of advanced silicon-based devices used in modern optical and electronic circuits.
Soroosh et al. (Fri,) studied this question.