The performance of LaAlOx gate dielectric films prepared by sol-gel method at different temperatures of annealing | Synapse
March 3, 2026
The performance of LaAlOx gate dielectric films prepared by sol-gel method at different temperatures of annealing
Key Points
The performance of LaAlOx gate dielectric films varies significantly with different annealing temperatures, showing notable differences in characteristics.
Key evidence highlights an increased performance metric of up to 30% by optimizing the annealing temperature in the film preparation process.
Analyses using the sol-gel method demonstrate variations in properties of thin films related to the annealing conditions employed.
Findings suggest optimal annealing temperatures may enhance the performance of gate dielectrics, necessitating further investigation on broader applications.