Width-Dependent Subthreshold Swing in Self-Aligned Top-Gate InGaZnO Thin-Film Transistors

Key Points

• The observed subthreshold swing varies with the gate width of the transistors, affecting performance characteristics.
• Measurements show significant differences in subthreshold swing, suggesting potential optimization avenues for transistor design.
• Assessment of self-aligned top-gate InGaZnO transistors provides insights into electrical behavior across different widths.
• Results highlight the importance of gate width on thin-film transistor performance, warranting further exploration.