Bismuth selenide (Bi2Se3) is a widely studied topological insulator and thermoelectric material whose properties are highly sensitive to crystal quality, defects, and stoichiometry. Recrystallization is an effective method of improving the crystal quality of materials, yet traditional experimental approaches are time-consuming and resource-intensive and often rely on trial and error. This work presents a new Bi/Se ReaxFF force field with the ability to recrystallize bulk Bi2Se3 into van der Waals (vdW)-layered phases under various thermal and kinetic conditions. The force field is parameterized using a diverse quantum mechanical data set, which includes formation energies of bulk layered and nonlayered Bi-Se phases, the energy-volume equation of state, point defect formation energies, the composition-dependent energetic stability trends of high-temperature Bi x Se y clusters, and amorphous Bi2Se3 structures sampled from melt-quench molecular dynamics simulations. Our simulations reveal that structural characteristics of the resulting recrystallized vdW materials, such as stacking order and stoichiometry, depend on melt-quenching processing parameters such as the cooling rate and annealing temperature. This novel force field constitutes a predictive framework for the structural tuning of complex Bi-Se vdW materials through recrystallization conditions, laying a foundation for computational design of a much wider selection of chalcogenides.
Jeong et al. (Fri,) studied this question.