Fabrication, characterization, and physics of IIIV heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

This work demonstrates the steepest subthreshold swing (SS D ) and improved drive current compared to the homojunction III-V TFETs. Electrical oxide thickness (EOT) scaling and increased source doping in tandem with tunnel barrier height reduction are shown to greatly improve the SS of the III-V TFETs and increase I D by more than 20X.