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HfO 2 -based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.
Raffel et al. (Sun,) studied this question.
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