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Vapor-deposited thin films of a newly developed sulfur-containing heteroarene, 2,7-diphenyl1benzothieno3,2-b1benzothiophene (DPh-BTBT), were used as an active layer of OFETs, which showed excellent FET characteristics in ambient conditions with mobilities of approximately 2.0 cm2 V-1 s-1 and Ion/Ioff of 107.
Takimiya et al. (Fri,) studied this question.
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