We studied and optimized the design of the magnetic tunnel junction for use in a spintronic 16-bit reconfigurable physical unclonable function. During the study, we developed a circuit model of the magnetic tunnel junction that considers the influence of temperature fluctuations on stochastic effects in the nanostructure. The model is compatible with modern circuit simulators, which allows it to be used for designing a hybrid spintronic-electronic circuit of a 16-bit reconfigurable physical unclonable function. The control transistor circuit is designed for 90 nm design standards in the Virtuoso environment. In the circuit simulator, numerical modeling of the stochastic behavior of the magnetic tunnel junction was performed using the Monte Carlo method, because of which it was shown that the probability of switching the structure is 50% over a wide temperature range.
Lobkova et al. (Sun,) studied this question.