In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky superjunction diodes are compared to reference lateral Schottky diodes on n-GaN to demonstrate the effect of net dopant balance in reverse bias, which resulted in an ∼80× improvement in breakdown voltage with the charge balanced layers with no degradation in the forward on-state characteristics.
Biegler et al. (Wed,) studied this question.