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This research aims to optimize InGaN multicomponent nanoheterostructures for achieving red light emission through europium doping.

May 10, 2026Crystallography Reports0 citations

InGaN Multicomponent Nanoheterostructure Optimization for Red Emission

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MOM. N. OrlovaNational University of Science and Technology ORO. I. RabinovichNational University of Science and Technology SPS.V. PodgornayaNational University of Science and Technology

Key Points

This research aims to optimize InGaN multicomponent nanoheterostructures for achieving red light emission through europium doping.
Simulated InGaN MCNH using SimWindows software.
Doped active region with 3% europium between quantum wells.
Grew InGaN (Eu) nanoheterostructures using MOCVD based on simulation results.
Theoretical and experimental data showed successful red emission from doped InGaN MCNH.
Doping with europium led to improved red emission characteristics.

Abstract

InGaN multicomponent nanoheterostructure (MCNH) optimization for reaching red emission was carried out based on simulation in SimWindows software. Based on theoretical results it was detected that doping InGaN MCNH active region by Europium (3%) into barriers between multiply quantum wells in the active region InGaN red emission can be seen. InGaN (Eu) multicomponent nanoheterostructure were grown by MOCVD based on simulation results. Comparison of the theoretical data and the experimental data was performed.

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InGaN Multicomponent Nanoheterostructure Optimization for Red Emission

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