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Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
Liu et al. (Wed,) studied this question.