Photogalvanic effect of 2D van der Waals heterojunction M2XT2/SiC by first-principles calculations

Key Points

• This research aims to explore the structural, electronic, and optoelectronic characteristics of M2XT2/SiC heterojunctions.
• Conducted first-principles calculations to evaluate structural and electronic properties.
• Analyzed optoelectronic parameters of M2XT2/SiC for different compositions (M = Sc, Y; X = C; T = F, Cl, Br).
• Identified enhanced optoelectronic properties in specific van der Waals heterojunctions.
• Demonstrated potential for high-performance applications in electronic devices.