In realization of its potential for use in large-scale information processing applications, memristors have attracted a lot of attention. With respect to their strong optoelectronic responsiveness, low energy consumption, and suitability for low-temperature manufacturing techniques, metal halide perovskites (MHPs) have become the most promising candidates among the potential materials. A comprehensive study of current progress in the field of MHP memristors is presented in this review article. We started by outlining the essential conditions of the fundamental resistive switching processes in perovskite memristors. This paper examines how the dynamics of mobile ionic species regulate the regulation of electrical resistance in MHPs. The interaction between ionic and electronic processes is given special attention, with an emphasis on doping-related events that are supported by both theoretical models and experimental data. Finally, we discuss the main issues that need to be resolved in order to make MHPs applicable in developing nonvolatile memory devices and neuromorphic memristor applications.
Subhani et al. (Mon,) studied this question.