Key points are not available for this paper at this time.
We perform a calculation of the nuclear recoil ionization efficiency in silicon using an improved version of Lindhard's theory, in which atomic bond breaking is modeled as a function of the initial ionic energy, the interatomic potential, and the average energy for ion-vacancy pair production. Better descriptions of the effects due to electronic stopping and straggling, charge screening, and Coulomb repulsion between ions are also incorporated. Our model provides a good description of the available data over nearly four orders of magnitude of nuclear recoil energy.
Sarkis et al. (Tue,) studied this question.