December 17, 2002

Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing

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Abstract

There exists an acute need for fast high-voltage solid-state switches in a broad area of applications. With the proposed method of active gate-controlled voltage balancing, fast high power/high voltage semiconductor switches with working voltages of several kilovolts using series-connected insulated gate bipolar transistors (IGBT) can be realized. Transient and static voltage balancing is tested on an experimental 3.5 kV/300 A switch with three series-connected 3rd-generation IGBTs.>

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Cite This Study

C. Gerster (Tue,) studied this question.

synapsesocial.com/papers/6a158dba79ff98d0de4ece2c https://doi.org/https://doi.org/10.1109/apec.1994.316362

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