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A generalized theory for determining the field-enhanced thermal emission rates and carrier capture cross section of deep-level defects at very high field and for large trap density by the reverse pulsed deep-level transient spectroscopy technique has been developed in this paper. Using this new theory the field-enhanced emission rates for the DX center in a liquid-phase-epitaxial grown Sn-doped Al0.2Ga0.8As were determined for field strength up to 7×105 V/cm.
Choi et al. (Tue,) studied this question.
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