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January 1, 1972Proceedings of the IEEE160 citations

Proton-bombardment formation of stripe-geometry heterostructure lasers for 300 K CW operation

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JDJ. C. DymentLDL.A. D'AsaroJNJ. C. North

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Abstract

A method of defining the active region of stripe-geometry junction lasers by proton-bombardment-induced high-resistivity layers is described. The method yields more reproducible mode patterns and lower threshold currents than the previously used oxide insulation. The improved lasers operated continuously at heat-sink temperatures up to 110°C.

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Dyment et al. (1972) studied this question.

synapsesocial.com/papers/6a6f2bcbaf0c21e9392757e9https://doi.org/10.1109/proc.1972.8734
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